Display device

ABSTRACT

To make the dimension of an electrostatic protection circuit small with the same maintained high in sensitivity. The electrostatic protection circuit is of the configuration that a first diode and a second diode are connected in series, wherein a semiconductor layer owned by each diode is configured to be sandwiched between a gate electrode and a conductive light shielding film. The light shielding film is formed to overlap with the semiconductor layer and has a wider area than the semiconductor layer. This results in having a gate covering the semiconductor layer from an upper side and a back gate covering the semiconductor layer from a lower side, so that the sensitivity can be maintained high irrespective of decreasing the electrostatic protection circuit in dimension.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.16/196,269 filed on Nov. 20, 2018, which, in turn, is a continuation ofU.S. patent application Ser. No. 15/912,672 (now U.S. Pat. No.10,163,943) filed on Mar. 6, 2018, which, in turn, is a continuation ofU.S. patent application Ser. No. 15/333,377 (now U.S. Pat. No.9,941,306) filed on Oct. 25, 2016. Further, this application claimspriority from Japanese Patent Application JP 2015-237251 filed on Dec.4, 2015, the entire contents of which are hereby incorporated byreference into this application.

BACKGROUND OF THE INVENTION (1) Field of the Invention

The present invention relates to a display device and particularly, to adisplay region capable of forming an electrostatic protection circuit ina narrow region.

(2) Description of the Related Art

In liquid crystal display devices being one kind of display devices,there are arranged a TFT substrate on which pixels having pixelelectrodes and thin film transistors (TFTs) are formed in a matrixfashion, and an opposite substrate facing the TFT substrate, and aliquid crystal layer is provided with itself between the TFT substrateand the opposite substrate. Then, an image is formed by controlling thetransmission factors of light through liquid crystal molecules on apixel-by-pixel basis.

The liquid crystal display device is formed with a TFT for each of thepixels, and a scanning line drive circuit and the like having many TFTsis formed outside the display region. When static electricity invadesfrom outside, a TFT is destroyed by the static electricity to cause theliquid crystal display device fall in failure. In order to prevent this,there is arranged an electrostatic protection circuit. The electrostaticprotection circuit is called ESD (Electro Static Discharger) in somecases. International Application Publication WO-A1-2010147032 describesa configuration that uses resistances and diodes for the ESD circuit ina display device. Further, Japanese Patent Application Publication No.2009-37124 A1 discloses a display device with an electrostaticprotection circuit.

In liquid crystal display devices of medium to small sizes, it has beenstrongly requested to make the size of a display region large with theexternal size remained small. If such is done, a frame region outsidethe display region becomes small. On one hand, an electrostaticprotection circuit is essential for the protection of TFTs used in theliquid crystal display device. In order to maintain the sensitivity ofthe electrostatic protection circuit high, a certain degree of size isrequired for the TFTs used in the electrostatic protection circuit.

On the other hand, the electrostatic protection circuit is formed in aframe region, and thus, for a small frame region, it is necessary tomake small the area used for the electrostatic protection circuit.However, there arises a dilemma that making the area occupied by theelectrostatic protection circuit small generally results in lowering thesensitivity of the electrostatic protection circuit.

SUMMARY OF THE INVENTION

Therefore, it is an object of the present invention to realize aconfiguration in which with the sensitivity of an electrostaticprotection circuit maintained high, the area occupied by theelectrostatic protection circuit can be reduced so that a frame regionof a display device can be made to be small. It is to be noted that theproblem like this equally exists not only in liquid crystal displaydevices but also in organic EL (electroluminescence) display devicesusing many TFTs.

The present invention has been made to overcome the foregoing problemand typically takes the following configuration. That is, the presentinvention is directed in one aspect to a display device having anelectrostatic protection circuit which is of a configuration that afirst diode and a second diode are connected in series between a firstconnection wire with a first power source voltage applied and a secondconnection wire with a second power source voltage applied and in whichbetween the first and second diodes, a third connection wire connectedto the first and second diodes is formed and is provided with a firstterminal and a second terminal. The first diode has a firstsemiconductor layer, a first gate electrode and a conductive first lightshielding film, the first gate electrode is connected to the thirdconnection wire, and the first light shielding film is formed, as viewedin a plan view, to extend to an overlapping position with the thirdconnection wire and is formed in an overlapping relation with thesemiconductor layer to possess a wider area than the semiconductorlayer. The second diode has a second semiconductor layer, a second gateelectrode and a conductive second light shielding film, the second gateelectrode is connected to the second connection wire, and the secondlight shielding film is formed, as viewed in a plan view, to extend toan overlapping position with the second connection wire and is formed inan overlapping relation with the semiconductor layer to possess a widerarea than the semiconductor layer.

BRIEF DESCRIPTION OF THE DRAWINGS

A non-limiting and non-exhaustive embodiment of the present inventionwill be described with reference to the following drawings, wherein likereference numerals refer to like or corresponding parts throughoutvarious views unless otherwise specified.

FIG. 1 is a plan view of a liquid crystal display device to which thepresent invention is applied.

FIG. 2 is a plan view showing the configuration of a pixel in a displayregion of the liquid crystal display device.

FIG. 3 is a sectional view of a pixel part, taken along the line A-A inFIG. 2.

FIG. 4 is a diagram showing an example of an electrostatic protectioncircuit.

FIG. 5 is a diagram showing a configuration example of diodes shown inFIG. 4.

FIG. 6 is a plan view showing an example of a layout corresponding tothe circuit shown in FIG. 5.

FIG. 7 is a sectional view taken along the line B-B in FIG. 6.

FIG. 8 is a sectional view taken along the line C-C in FIG. 6.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

Hereafter, the present invention will be described in detail based on anembodiment. It is to be noted that although the following embodimentwill be described by taking a liquid crystal display device as anexample, the present invention will be applicable also to an organic EL(electroluminescence) display device.

First Embodiment

FIG. 1 is a plan view of a liquid crystal display panel used in a liquidcrystal display device to which the present invention is applied. In adisplay region 90 shown in FIG. 1, scanning lines 10 extend in atransverse direction and are arrayed in a longitudinal direction, whilevideo signal lines 20 extend in the longitudinal direction and arearrayed in the transverse direction. Each region surrounded by thescanning lines 10 and the video signal lines 20 constitutes a pixel 25.In FIG. 1, the scanning lines 10 and the video signal lines 20 areformed on a TFT substrate 100. An opposite substrate 200 is disposed toface the TFT substrate 100, and the TFT substrate 100 and the oppositesubstrate 200 are adhered to each other by means of a sealing compound70 at their peripheral parts, inside which a liquid crystal layer iscontained. The TFT substrate 100 is formed to be larger than theopposite substrate 200, and at the portion where the TFT substrate 100alone exists as a single piece, a terminal section 80 is formed, onwhich a wiring is formed to supply the liquid crystal display panel withelectric power, video signals and the like and on which a drive IC60 isarranged. Further, a flexible printed wiring substrate is connected toan end part of the terminal section 80 for supplying power source,signals and the like.

In FIG. 1, the outside of the display region 90 is defined as a frameregion. The frame region of the TFT substrate 100 is formed with anelectrostatic protection circuit 50, a scanning line drive circuit 40and the like. Although in FIG. 1, for better understanding, theelectrostatic protection circuit 50, the scanning line drive circuit 40and the like are arranged on the side closer to the display region 90side than the sealing compound 70, it is often the case in actualproducts that these circuits are formed to be overlapped with thesealing compound 70. Many wires formed between the terminal section 80and the display region 90 are omitted in FIG. 1 for brevity inillustration.

In FIG. 1, the scanning line drive circuit 40 is formed outside the bothlong sides of the display region 90. The electrostatic protectioncircuit 50 is arranged at the side that is on the terminal section 80side. Although it is often the case that the electrostatic protectioncircuit 50 is arranged to be concentrated at the side on the terminalsection 80 side, the electrostatic protection circuit 50 may be arrangedat another side in some cases. The present invention is also applicableto the case where the electrostatic protection circuit 50 is arrangedoutside of another side of the display region 90.

Although liquid crystal display devices involve a problem in terms ofthe viewing angle, a panel of the IPS (In-Plane-Switching) modepossesses an excellent viewing angle characteristics. The followingdescription will be made taking a liquid crystal display device of theIPS mode as an example. However, it is needless to say that the presentinvention is also applicable to liquid crystal display devices of othermodes such as, for example, TN (Twisted Nematic), VA (VerticalAlignment) and the like.

FIG. 2 is a plan view showing an example of a pixel in the liquidcrystal display device of the IPS mode. There are various kinds ofconfigurations in the IPS mode, and FIG. 2 shows a plan view of thepixel configuration of a so-called FFS (Fringe Field Switching) modebelonging to the IPS mode. In FIG. 2, the scanning lines 10 extend inthe transverse direction and are arrayed in the longitudinal direction,while the video signal lines 20 extend in the vertical direction and arearrayed in the transverse direction. A pixel electrode 112 is formed ateach region surrounded by the scanning lines 10 and the video signallines 20.

In FIG. 2, a configuration is taken that a semiconductor layer 103extends in a U-shape from a through hole 140 to pass twice under thescanning line 10. Portions at which the semiconductor layer 103 passesacross the scanning line 10 are configured as TFTs. That is, at theseportions, the scanning line 10 constitutes gate electrodes. Thesemiconductor layer 103 is connected to a contact electrode 107 at athrough hole 120, and the contact electrode 107 is connected to thepixel electrode 112 at a through hole 130. The pixel electrode 112 isconfigured as a comb-tooth electrode with slits 1121 inside.

The portions at which the semiconductor layer 103 passes across the gateelectrode (i.e., scanning line) 10 constitute channel regions of theTFTs. When these regions are lighted by a backlight, photoelectriccurrent is generated to make it unable to hold the video signal. Toprevent this, light shielding films 30 are formed at these portions notto let the light from the backlight reach the channel regions of thesemiconductor layer 103.

FIG. 3 is a sectional view taken along the line A-A in FIG. 2. The TFTin FIG. 3 is a so-called top gate type TFT and uses LTPS (LowTemperature Poly-Silicon) as the semiconductor. In FIG. 3, in the firstplace, light shielding films 30 of a metal such as, for example, Mo orthe like are formed at portions corresponding to channel regions of TFTsto be formed thereafter. Because being sufficient to be able to shieldlight, the metal is 50 nm (nanometers) or so in thickness. Besidesmetals, the light shielding films 30 may be of an alloy such as MoW orthe like or may each be of a laminated film thereof. Further, the lightshielding films 30 may be the same laminated configuration as the gateelectrodes, the scanning lines or the video signal lines. However, it isrequired that the light shielding films 30 each be an electric conductoras a whole.

Then, a first backing (foundation) film 101 made of SiN and a secondbacking film 102 made of SiO₂ are formed on the light shielding films 30and a glass substrate 100 by a CVD (Chemical Vapor Deposition) method.The roles of the first backing film 101 and the second backing film 102are to prevent a semiconductor layer 103 from being contaminated byimpurities from the glass substrate 100. For example, the first backingfilm 101 is 20 nm in thickness, and the second backing film 102 is 200nm in thickness.

The semiconductor layer 103 for constituting TFTs is formed on thesecond backing film 102. This semiconductor layer 103 is formed in sucha way that first, an a-Si film is formed by a CVD method on the secondbacking film 102 and then, is converted into a poly-Si film by beingsubjected to a laser annealing process. The poly-Si film is patterned byphotolithographic technique.

A gate insulating film 104 is formed on the semiconductor layer 103.This insulating film 104 is a SiO₂ film formed using TEOS(Tetraethoxysilane). This film 104 is also formed by a CVD method. Thegate electrodes 105 are formed on the insulating film 104. The scanningline 10 shown in FIG. 2 doubles as the gate electrodes 105. Because thesemiconductor layer 103 passes under the scanning line 10 twice, twogate electrodes 105 are arranged. The gate electrodes 105 are eachformed using a MoW film, for example.

The gate electrodes 105 are patterned by photolithographic technique. Inpatterning, an impurity like phosphorus, boron or the like is doped intothe poly-Si layer by ion implantation process to form a source S or adrain D on the poly-Si layer. Further, in patterning the gate electrodes105, photoresist is utilized to form LDD (Lightly Doped Drain) layersbetween the channel layer and the source or drain of the poly-Si layer.This is to prevent the electric field intensity from becoming largelocally. Forming the LDDs like this is equally applied to TFTs in theelectrostatic protection circuit referred to later.

Thereafter, an interlayer insulating film 106 is formed using SiO₂ tocover the gate electrodes 105. The interlayer insulating film 106 is toinsulate the gate electrodes 105 from the contact electrode 107. In theinterlayer insulating film 106 and the gate insulating film 104, thethrough hole 120 is formed connecting the semiconductor layer 103 to thecontact electrode 107. The through hole 120 is formed byphotolithographic technique simultaneously in the interlayer insulatingfilm 106 and the gate insulating film 104.

The video signal lines 20 are formed on the interlayer insulating film106. Each video signal line 20 is connected at the through hole 140 tothe semiconductor layer 103. That is, this means that two TFTs areformed between the through hole 140 and the through hole 120. Theinterlayer insulating film 106 has thereon the contact electrode 107 inthe same layer as the video signal line 20. The contact electrode 107 isconnected to the pixel electrode 112 through the through hole 130. Thevideo signal line 20 and the contact electrode 107 are made using MoW,for example. Where the video signal line 20 is required to be lowered inresistance, there may be used a laminated film with an Al-alloy filmsandwiched in two MoW films and the like.

An inorganic passivation film 108 is formed using SiN or the like tocover the video signal line 20 and the contact electrode 107 and thus,covers the whole of the TFTs. Like the first backing film 101 and thelike, the inorganic passivation film 108 is formed by a CVD method.Incidentally, the formation of the inorganic passivation film 108 may beomitted depending on products. An organic passivation film 109 is formedto cover the inorganic passivation film 108. The organic passivationfilm 109 is formed using photosensitive acrylic resin. Besides usingphotosensitive acrylic resin, the organic passivation film 109 can alsobe formed using silicon resin, epoxy resin, polyamide resin or the like.The organic passivation film 109 is formed to be thick because of havinga role as a flattening film. The film thickness of the organicpassivation film 109 is in a range of 1 to 4 μm and, in most cases, is 2nm or so.

For electrical continuity of the pixel electrode 112 to the contactelectrode 107, the through hole 130 is formed in the inorganicpassivation film 108 and the organic passivation film 109.Photosensitive resin is used as the organic passivation film 109. Afterbeing applied, the photosensitive resin is exposed to light, so thatonly portions shined by the light dissolve in a specified developingsolution. That is, by using the photosensitive resin, the formation ofphotoresist can be omitted. After the formation of the through hole 130in the organic passivation film 109, the organic passivation film 109 isbaked at the temperature of 230° C. or so, whereby the organicpassivation film 109 is completed.

Thereafter, ITO (Indium Tin Oxide) becoming a common electrode 110 isformed by sputtering, and patterning is carried out to remove the ITOfrom the through hole 130 and from around the through hole 130. Thecommon electrode 110 can be formed to a flat shape to be common torespective pixels. Then, SiN becoming a capacitive insulating film 111is formed over the entire surface by a CVD method. Then, in the throughhole 130, a through hole that makes electrical continuity of the contactelectrode 107 to the pixel electrode 112 is formed in the capacitiveinsulating film 111 and the inorganic passivation film 108.Incidentally, the capacitive insulating film 111 is used to form aholding capacitor between the common electrode 110 and the pixelelectrode 112 and thus, is called like this.

Subsequently, ITO is formed by sputtering and then, is subjected topatterning to form the pixel electrode 112. The planar shape of thepixel electrode 112 is as illustrated in FIG. 2. Alignment film materialis applied onto the pixel electrode 112 by a flexographic printingmethod, an ink-jet printing method or the like and is then baked to forman alignment film 113. For the alignment treatment of the alignment film113, there may be used a photo-alignment control using polarizedultraviolet rays besides a rubbing method.

When a voltage is applied between the pixel electrode 112 and the commonelectrode 110, lines of electric force are generated. Liquid crystalmolecules 301 are turned as shown in FIG. 3 under an electric fieldgenerated by the lines of electric force, and the quantity of lightpassing through a liquid crystal layer 300 is controlled on apixel-by-pixel basis to form an image.

In FIG. 3, the opposite substrate 200 is arranged with the liquidcrystal layer 300 placed thereunder. A color filter layer is formedinside the opposite substrate 200. The color filter layer has red, greenand blue color filter parts 201 regularly assigned to respective pixels,so that color images can be formed. A black matrix 202 also included inthe color filter layer is interposed between every two adjoining colorfilter parts 201 of the color filter layer to enhance contrast in image.The black matrix 202 has a role as a light shielding film against lightfrom outside to the TFT and prevents photoelectric current from flowingthrough the TFT.

An overcoat film 203 is formed to cover the color filter layer includingthe color filter parts 201 and the black matrix 202. Since the colorfilter parts 201 and the black matrix 202 are irregular in surface, theovercoat film 203 is formed to flatten the surface. The overcoat film203 has formed thereon an alignment film 113 that determines the initialalignment of the liquid crystal layer. The alignment treatment for thisalignment film 113 uses a rubbing method or an optical aligning methodas used for the aforementioned alignment film 113 on the TFT substrate100 side.

When electrostatic noise being high in voltage invades from outside intoa TFT formed within a display region, the TFT is destroyed. If thisoccurs, the pixel becomes defect and hence, the liquid crystal panelbecomes faulty. The same is true with TFTs formed in the scanning linedrive circuit 40. The electrostatic protection circuit 50 shown in FIG.1 is formed in order to protect the TFTs formed within the displayregion 90 or in the scanning line drive circuit 40 from the staticelectricity that invades from outside.

FIG. 4 is a basic circuit of an electrostatic protection circuit. Theelectrostatic protection circuit is configured by two diodes of a firstdiode 51 and a second diode 52. The electrostatic protection circuitshown in FIG. 4 is formed for each of terminals existing at the terminalsection 80. The electrostatic protection circuit is provided with aterminal IN being an input terminal, a terminal OUT being an outputterminal, a terminal VDD connected to a DC power source (high-voltageside) and a terminal VSS connected to a DC power source (low-voltageside). Specifically, the terminal IN being the input terminal isconnected to an external input terminal side of the terminal section 80being an invading route of static electricity. The terminal OUT beingthe output terminal is connected to the video signal line extendingtoward the display region 90 or to the scanning line drive circuit 40side. Where the scanning line drive circuit 40 constituted by a shiftregister that operates under two power sources is formed outside thedisplay region 90, the terminal VDD is connected to a high-voltage sideof the shift register, while the terminal VSS is connected to alow-voltage side of the shift register. Incidentally, the terminal VDDis unable to have an AC signal inputted thereto and thus, should nothave any video signal line connected thereto. Further, where theterminal VSS is set to the ground potential, the video signal is notoutputted on the negative electrode side, and thus, the terminal VSSshould not be connected to a part placed under the ground potential.

In FIG. 4, the diodes 51 and 52 usually do not operate because of havinga reverse bias. Accordingly, the diodes 51 and 52 do not influence anormal operation. In FIG. 4, when a large positive surge currentattributed to static electricity invades into the terminal IN, the firstdiode 51 operates, whereby the electric charge depending on the staticelectricity is discharged to the terminal VDD side. On the other hand,when a large negative surge current attributed to the static electricityinvades into the terminal IN, the second diode 52 operates, whereby theelectric charge depending on the static electricity is discharged to theterminal VSS side. Accordingly, it is possible to prevent the surgecurrent attributed to the static electricity from invading into thedisplay region 90 or the scanning line drive circuit 40.

FIG. 5 shows an example of the protection diodes 51, 52 used in theliquid crystal display panel. In the liquid crystal display panel, theprotection diodes 51, 52 are each configured to have a gate electrode ofa TFT connected to a drain electrode or a source electrode through asemiconductor layer. The protection diodes 51, 52 are required to let alarge electric current flow when operated by the invasion of a surgecurrent. Therefore, it is necessary that the channel width of the TFTconstituting the protection diodes 51, 52 be much larger than thechannel width of the TFTs formed at pixels 25 in the display region 90or formed in the scanning line drive circuit 40. That is, a wide area isrequired for the layout of the protection diodes 51, 52.

FIG. 6 shows a layout example of the electrostatic protection circuit 50in the present invention. In FIG. 6, a wire IN corresponds to theterminal IN in FIG. 5, while a wire OUT corresponds to the terminal OUTin FIG. 5. A diode on the right side in FIG. 6 corresponds to the firstdiode 51 in FIG. 5, while a diode on the left side corresponds to thesecond diode 52 in FIG. 5. The first diode 51 and the second diode 52are juxtaposed with a common SD (source drain) wire 503 therebetween. InFIG. 6, the common SD wire 503 is connected on the lower side to thewire IN through a through hole 170 and is connected on the upper side tothe wire OUT through a through hole 180.

The first diode 51 on the right side is connected at a gate electrode1051 of the TFT to the common SD wire 503 through a gate electrodethrough hole 160. The second diode 52 on the left side is connected at agate electrode 1052 of the TFT to a SD wire 502 on the VSS side througha gate electrode through hole 160.

In the begging, description will be made regarding the configuration ofthe first diode 51 on the right side in FIG. 6. In the first diode 51 onthe right side in FIG. 6, an SD wire 501 on the VDD side and asemiconductor layer 1031 are connected through many through holes 150.This is to enable a large surge current to flow. The same is true withthe connection of the common SD wire 503 to the semiconductor layer1031. In the first diode 51 on the right side, the gate electrode 1051is placed to bifurcate between the common SD wire 503 on the wire INside and the SD wire 501 on the VDD side and takes a double gatestructure having two gate electrodes. This is to minimize leak current.The gate electrode 1051 is connected on the wire OUT side to the commonSD wire 503 through the through hole 160. The second diode 52 on theleft side in FIG. 6 takes the same structure as the first diode 51 onthe right side except for a respect that a gate electrode 1052 isconnected to the SD wire 502 on the VSS side through the through hole160.

The role of the electrostatic protection circuit 50 is make it possiblethat before an electric charge attributed to static electricity whichcomes to invade into the wire IN side in FIG. 6 flows toward the wireOUT side, the first diode 51 or the second diode 52 discharges theelectric charge to the VDD side or the VSS side. In order to let a largecurrent flow, the first diode 51 and the second diode 52 are required tobe increased in channel width. That is, the diodes 51, 52 shown in FIG.6 are needed to be increased in the longitudinal dimension DL. In theprior art, for example, 1350 μm or so has been required as thisdimension DL.

Electrostatic protection circuits like this have been formed outside adisplay region, that is, in a frame region, wherein it has beenrequested in recent years to make the width of the frame region narrow.In accordance with this trend, it has also been desired to decrease theelectrostatic protection circuit in dimension. However, where thedimension DL indicated in FIG. 6 is decreased, the sensitivity of theelectrostatic protection circuit goes down to become unable to perform asatisfactory protection function.

The present invention is designed so that a light shielding film 301made of an electric conductor is arranged to extend to under thesemiconductor layer 1031 on the SD wire 503 side, wherein the voltageinvading into the SD wire 503 is induced also in the light shieldingfilm 301 by a capacitive coupling, and thus, the light shielding film301 can be used as a gate electrode. That is, the light shielding film301 is used as a back gate. By so doing, the channel region has electriccharges induced on the upper side and the lower side, so that it becomespossible to let a large current flow. Accordingly, even where thedimension DL of the diodes 51, 52 is made to be small, the sensitivityof the electrostatic protection circuit 50 can be prevented from goingdown. According to the present invention, a satisfactory function as theelectrostatic protection circuit 50 can be accomplished even where thedimension DL is decreased to the half or so of that in the prior art.

In the first diode 51 on the right side in FIG. 6, the light shieldingfilm 301 is continuously formed to be a flat shape under the gateelectrode 1051 and the common SD wire 503. The light shielding film 301is a conductive member made of the same material as the gate electrode1051. For the purpose of shielding the channel region on thesemiconductor layer 1031 against the light of the backlight, the lightshielding film 301 suffices to be placed under the gate electrode 1051only. However, in the present invention, by extending the lightshielding film 301 to under the common SD wire 503, a large capacitivecoupling is constituted between the light shielding film 301 and thesemiconductor layer 1031. This makes the voltage at the common SD wire503 induced also at the light shielding film 301, so that the lightshielding film 301 can be used as a back gage. The feature of the firstdiode 51 on the right side in FIG. 6 resides in that the light shieldingfilm 301 is made to extend to the common SD wire 503 side on the sidewhere the gate electrode 1051 is connected.

FIG. 7 is a sectional view taken along the line B-B of the first diode51 on the right side in FIG. 6. FIG. 7 illustrates those layers onlywhich are necessary for description. That is, layers that are on theupper side than the common SD wire 503 are omitted for simplicity. InFIG. 7, on the TFT substrate 100 made of glass, first of all, the lightshielding film 301 is formed, on which the first backing film 101 andthe second backing film 102 are formed. The semiconductor layer 1031 isformed on the second backing film 102. The semiconductor layer 1031 isconnected to the common SD wire 503 and the SD wire 501 on the VDD sidethrough the through holes 150 formed in the gate insulating film 104 andthe interlayer insulating film 106.

On the semiconductor layer 1031, the gate electrode 1051 is arrangedthrough the gate insulating film 104. The channel of the TFT isconfigured under the gate electrode 1051. In the display region 90, asshown in FIG. 3, the light shielding films 30 overlap with the channelregions only of the semiconductor layer 103. This is to prevent a straycapacitance from being formed between the light shielding films 30 andany other wire. However, in the electrostatic protection circuit of thepresent invention, as shown in FIG. 7, the light shielding film 301 isnot only placed under the gate electrode 1051 but also is extended tounder the common SD wire 503. Thus, as viewed in the plan view, thelight shielding film 301 has a wider area than the semiconductor layer1031, on the common SD wire 503 side, and the light shielding film 301and the semiconductor layer 1031 have a wide overlapping region. Thisoverlapping region becomes a parallel-plate capacitor. Although thelight shielding film 301 is electrically floating, the semiconductorlayer 1031 has an electrical potential applied from the through hole 150and thus, if the capacitance at this overlapping region is charged, thelight shielding film 301 also comes close to the same electricalpotential. This capacitive coupling causes the light shielding film 301to function as a back gate.

As a result, in an ON state, the semiconductor layer 1031 comes to beinfluenced by the gate electrode 1051 and the light shielding film 301and hence, can let a large ON current flow. In short, it is possible toenhance the sensitivity of the electrostatic protection circuit 50. InFIG. 7, the feature resides in that the light shielding film 301 extendsto the common SD wire 503 side that is on the side where the gateelectrode 1051 is connected, as shown in FIG. 6. With thisconfiguration, it can be accomplished to increase the ON current withoutchanging a threshold voltage of the diode 51.

Incidentally, although the forming process becomes complicated, thelight shielding film 301 may be formed to be electrically connected tothe semiconductor layer 1031. In this case, even when a steep pulse isinputted to the terminal IN, no long time is taken for the chargingbetween the semiconductor layer 1031 and the light shielding film 301,so that such formation of electrical connection make it possible to copewith the case that the capacitive coupling method cannot be cope withthe problem.

The second diode 52 on the left side in FIG. 6 has similar configurationand operation. However, a difference resides in that the second diode 52on the left side has the light shielding film 301 extended to under theSD wire 502 on the VSS side.

FIG. 8 is a sectional view taken along the line C-C of the second diode52 on the left side in FIG. 6. The configuration shown in FIG. 8 is thesame as that in FIG. 7 except that the semiconductor layer 1031 isconnected to the common SD wire 503 on the terminal IN side and to theSD wire 502 on the VSS side. Then, in the configuration shown in FIG. 8,the light shielding film 301 extends to under the SD wire 502 on the VSSside. However, this is the same as the case of the first diode 51 in arespect that the light shielding film 301 extends to under the SD wire502 to which the gate electrode 1052 is connected. The light shieldingfilms 301 shown in FIG. 6 to FIG. 8 are formed using the same materialand in the same layer as the light shielding film 30 in the pixelconfiguration within the display region 90 shown in FIG. 3. Therefore,forming the light shielding film 301 in the electrostatic protectioncircuit 50 can be done simultaneously with forming the light shieldingfilm 30 in the pixel configuration within the display region 90 shown inFIG. 3.

Further, the layout of each TFT in FIG. 6 is linear. In an actualcircuit, in order to make the dimension DL in FIG. 6 small, it may bethe case that each TFT is formed by being bent or is formed by beingdivided into plural pieces and by juxtaposing these pieces. However,also in this modified case like this, the area the TFT occupies as awhole does not change. Accordingly, also in the case where like thiseach TFT is formed by being bent or is formed by being divided intoplural pieces and by juxtaposing these pieces, it is possible by theapplication of the present invention to decrease the area occupied bythe whole of the electrostatic protection circuit 50.

Although the foregoing description has been made taking the liquidcrystal display device as an example, the electrostatic protectioncircuit 50 according to the present invention is also applicable to anorganic EL display region.

What is claimed is:
 1. A display device having a substrate and anelectrostatic protection circuit formed on the substrate, theelectrostatic protection circuit having a configuration in which a firstconnection wire, a first diode, a third connection wire, a second diode,and a second connection wire are connected in series, and a thirdconnection wire has a first terminal and a second terminal; wherein thefirst diode has a first semiconductor layer and a first gate electrode,the first gate electrode has a first region connected to the thirdconnection wire, and a second region overlapping the first semiconductorlayer, the first diode has, as viewed in a cross-sectional view, astructure in which a first light shielding film is formed on thesubstrate, the first semiconductor layer is formed over the first lightshielding film, and the second region of the first gate electrode layeris formed over the first semiconductor layer, the second diode has asecond semiconductor layer and a second gate electrode, the second gateelectrode has a third region connected to the third connection wire, anda fourth region overlapping the second semiconductor layer, the seconddiode has, as viewed in a cross-sectional view, a structure in which asecond light shielding film is formed over the substrate, the secondsemiconductor layer is formed on the second light shielding film, andthe fourth region of the second gate electrode layer is formed over thesecond semiconductor layer.
 2. The display device according to claim 1,wherein The second region of the first gate electrode has a structurebifurcated from the first region, The fourth region of the second gateelectrode has a structure bifurcated from the third region.
 3. Thedisplay device according to claim 1, wherein the first diode has, asviewed in a cross-sectional view, a first insulating film, formedbetween the first light shielding film and the first semiconductorlayer, and a second insulating film, formed between the firstsemiconductor layer and the first gate electrode layer, the second diodehas, as viewed in a cross-sectional view, the first insulating film,formed between the second light shielding film and the secondsemiconductor layer, and the second insulating film, formed between thesecond semiconductor layer and the second gate electrode layer.
 4. Thedisplay device according to claim 1, wherein a first power sourcevoltage is applied to the first connection wire, a second power sourcevoltage is applied to the second connection wire, the first and secondpower source voltages are supplied from DC power source voltages formedwithin a display region.
 5. The display device according to claim 4,wherein: the display device has a scanning line drive circuit having ashift register that operates under two power sources; the first powersource is common to a power source on a high-voltage side for the shiftregister; and the second power source is common to a power source on alow-voltage side for the shift register.
 6. The display device accordingto claim 1, wherein the first terminal is connected to a terminal whereoutside signals for the display device are inputted.
 7. The displaydevice according to claim 1, wherein the second terminal is connected toa video signal line or a scanning line drive circuit.
 8. The displaydevice according to claim 1, wherein the first and the second lightshielding film are formed using the same material as the gate electrode.9. The display device according to claim 1, wherein: the display devicehas a display region and a frame region around the display region; andthe electrostatic protection circuit is formed in the frame region. 10.The display device according to claim 1, wherein the display device is aliquid crystal display device.
 11. The display device according to claim1, wherein the display device is an organic EL display.